We show that far-infrared radiation can be generated in the depletion field near semiconductor surfaces via the inverse Franz-Keldysh effect or electric-field-induced optical rectification. This mechanism is conceptually different from those previously proposed and accounts for many recent experimental observations
To enhance terahertz emission from an optically excited semiconductor surface, we propose to sandwic...
This thesis focused the understanding of the mechanisms responsible for different morphologies that ...
The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification o...
We show that far-infrared radiation can be generated in the depletion field near semiconductor surfa...
Femtosecond pulses of far-infrared (FIR) radiation can be generated in the depletion field near semi...
The recent observation of the optical rectification of femtosecond electromagnetic waves provides an...
The crystallographic orientation dependence of the far‐infrared (FIR) light generated at the (001) s...
Thesis (B.S.) in Chemical Engineering -- University of Illinois at Urbana-Champaign, 1990.Includes b...
Data from an earlier study [T. Vogel et al., Appl. Opt. 31, 329 (1992)] on the subnanosecond switchi...
Photo-excited charge carriers at semiconductor surfaces generate pulses of terahertz (THz) radiation...
We introduce a method for diagnosing the electric surface potential of a semiconductor based on THz ...
Excitation of photo-current transients at semiconductor surfaces by subpicosecond optical pulses giv...
We report a theoretical and experimental study of the generation of THz radiation by optical rectifi...
In this thesis, we study optical to microwave conversion and generation of ultrashort electrical pul...
Excitation of photo-current transients at semiconductor surfaces by subpicosecond optical pulses giv...
To enhance terahertz emission from an optically excited semiconductor surface, we propose to sandwic...
This thesis focused the understanding of the mechanisms responsible for different morphologies that ...
The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification o...
We show that far-infrared radiation can be generated in the depletion field near semiconductor surfa...
Femtosecond pulses of far-infrared (FIR) radiation can be generated in the depletion field near semi...
The recent observation of the optical rectification of femtosecond electromagnetic waves provides an...
The crystallographic orientation dependence of the far‐infrared (FIR) light generated at the (001) s...
Thesis (B.S.) in Chemical Engineering -- University of Illinois at Urbana-Champaign, 1990.Includes b...
Data from an earlier study [T. Vogel et al., Appl. Opt. 31, 329 (1992)] on the subnanosecond switchi...
Photo-excited charge carriers at semiconductor surfaces generate pulses of terahertz (THz) radiation...
We introduce a method for diagnosing the electric surface potential of a semiconductor based on THz ...
Excitation of photo-current transients at semiconductor surfaces by subpicosecond optical pulses giv...
We report a theoretical and experimental study of the generation of THz radiation by optical rectifi...
In this thesis, we study optical to microwave conversion and generation of ultrashort electrical pul...
Excitation of photo-current transients at semiconductor surfaces by subpicosecond optical pulses giv...
To enhance terahertz emission from an optically excited semiconductor surface, we propose to sandwic...
This thesis focused the understanding of the mechanisms responsible for different morphologies that ...
The use of a metal–oxide–semiconductor field-effect transistor (MOS-FET) permits the rectification o...