Photoluminescence spectra measured on a type-II GaSb/GaAs quantum dot ensemble at high excitation power indicate a Mott transition from the low density state comprising of spatially indirect excitons to a high density electron-plasma state. Under the influence of a very high magnetic field, the electron-plasma that is formed at high excitation powers is transformed into magneto-excitons
We calculate the photoluminescence spectrum of a single semiconductor quantum dot strongly coupled t...
The emission spectrum of self-assembled InGaAs/GaAs quantum dots filled with up to 10 excitions is m...
The type II band alignment of GaSb quantum dots (QDs) in a GaAs matrix leads to peculiar optical and...
Photoluminescence spectra measured on a type-II GaSb/GaAs quantum dot ensemble at high excitation po...
We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a t...
We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic...
We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs quantum dots. Th...
We report photoluminescence (PL) measurements on self-assembled GaSb/GaAs quantum dots. As the laser...
The magnetic field dependence of the excitonic states in unstrained GaAs/AlxGa1-xAs quantum dots is ...
In the present work we have investigated InAs/GaAs quantum dots (QDs), G aInNAs multiple quantum wel...
Quantum dots with strong three dimensional confinement and low surface density 106cm-2 have been ide...
InAs/GaAs quantum dots (QDs) formation was studied by photoluminescence (PL) in magnetic fields up t...
We present a magnetophotoluminescence study on neutral and charged excitons confined to InAs/GaAs qu...
In this thesis the optical properties of self-assembled III-V semiconductor nanostructures are inves...
We have investigated the effects of annealing a self-assembled InGaAs/GaAs quantum dot sample betwee...
We calculate the photoluminescence spectrum of a single semiconductor quantum dot strongly coupled t...
The emission spectrum of self-assembled InGaAs/GaAs quantum dots filled with up to 10 excitions is m...
The type II band alignment of GaSb quantum dots (QDs) in a GaAs matrix leads to peculiar optical and...
Photoluminescence spectra measured on a type-II GaSb/GaAs quantum dot ensemble at high excitation po...
We have used magneto-photoluminescence measurements to establish that InP/GaAs quantum dots have a t...
We have studied the photoluminescence from type-II GaSb/GaAs self-assembled quantum dots in magnetic...
We report the investigation of exciton dynamics in type-II self-assembled GaSb/GaAs quantum dots. Th...
We report photoluminescence (PL) measurements on self-assembled GaSb/GaAs quantum dots. As the laser...
The magnetic field dependence of the excitonic states in unstrained GaAs/AlxGa1-xAs quantum dots is ...
In the present work we have investigated InAs/GaAs quantum dots (QDs), G aInNAs multiple quantum wel...
Quantum dots with strong three dimensional confinement and low surface density 106cm-2 have been ide...
InAs/GaAs quantum dots (QDs) formation was studied by photoluminescence (PL) in magnetic fields up t...
We present a magnetophotoluminescence study on neutral and charged excitons confined to InAs/GaAs qu...
In this thesis the optical properties of self-assembled III-V semiconductor nanostructures are inves...
We have investigated the effects of annealing a self-assembled InGaAs/GaAs quantum dot sample betwee...
We calculate the photoluminescence spectrum of a single semiconductor quantum dot strongly coupled t...
The emission spectrum of self-assembled InGaAs/GaAs quantum dots filled with up to 10 excitions is m...
The type II band alignment of GaSb quantum dots (QDs) in a GaAs matrix leads to peculiar optical and...