[[abstract]]There are many kinds of commercial slurries used in Cu CMP. Major components include an oxidizing agent, complexing agents, inhibitors, and abrasives. We analyze the abrasive particle size by TEM and light scattering. Cu CMP polishing mechanism is also discussed under different particle size distribution. The complexing agent transportation will be the rate determining step when a small abrasive is insufficient, but the copper hydroxide removal rate will determine the overall polishing rate when the amount of smaller particles is enough. (C) 2012 Elsevier B.V. All rights reserved.[[note]]SC
Chemical-mechanical planarization (CMP) is a vital process for the fabrication of advanced copper mu...
Chemical mechanical polishing (CMP) of copper was performed using KIO3 as oxidizer and alumina parti...
Chemical-mechanical planarization (CMP) is a vital process for the fabrication of advanced copper mu...
[[abstract]]There are many kinds of commercial slurries used in Cu CMP. Major components include an ...
It is generally accepted that there is a minimum hardness requirement for abrasive particles to be u...
With stringent requirements of copper chemical mechanical planarization (CMP), such as minimized ste...
Chemical mechanical planarization (CMP) is a polishing process used during the manufacture of microe...
Chemical mechanical planarization (CMP) is used in integrated circuit manufacturing to remove excess...
Chemical mechanical planarization (CMP) is an enabling process technology for IC fabrication to main...
In this paper the influences of slurry chemistry and thickness of the copper layer on dishing will b...
Copper polishing performance depends significantly on the properties of pads, slurries, conditioning...
Copper chemical mechanical planarization is one of the most critical techniques for damascenes inter...
\u3cp\u3eA study of the chemical mechanical polishing (CMP) of thin copper films using fixed-abrasiv...
This paper presents a corrective Cu-CMP (Chemical Mechanical Polishing) method for obtaining higher ...
Chemical mechanical polishing (CMP) of copper was performed using KIO 3 as oxidizer and alumina part...
Chemical-mechanical planarization (CMP) is a vital process for the fabrication of advanced copper mu...
Chemical mechanical polishing (CMP) of copper was performed using KIO3 as oxidizer and alumina parti...
Chemical-mechanical planarization (CMP) is a vital process for the fabrication of advanced copper mu...
[[abstract]]There are many kinds of commercial slurries used in Cu CMP. Major components include an ...
It is generally accepted that there is a minimum hardness requirement for abrasive particles to be u...
With stringent requirements of copper chemical mechanical planarization (CMP), such as minimized ste...
Chemical mechanical planarization (CMP) is a polishing process used during the manufacture of microe...
Chemical mechanical planarization (CMP) is used in integrated circuit manufacturing to remove excess...
Chemical mechanical planarization (CMP) is an enabling process technology for IC fabrication to main...
In this paper the influences of slurry chemistry and thickness of the copper layer on dishing will b...
Copper polishing performance depends significantly on the properties of pads, slurries, conditioning...
Copper chemical mechanical planarization is one of the most critical techniques for damascenes inter...
\u3cp\u3eA study of the chemical mechanical polishing (CMP) of thin copper films using fixed-abrasiv...
This paper presents a corrective Cu-CMP (Chemical Mechanical Polishing) method for obtaining higher ...
Chemical mechanical polishing (CMP) of copper was performed using KIO 3 as oxidizer and alumina part...
Chemical-mechanical planarization (CMP) is a vital process for the fabrication of advanced copper mu...
Chemical mechanical polishing (CMP) of copper was performed using KIO3 as oxidizer and alumina parti...
Chemical-mechanical planarization (CMP) is a vital process for the fabrication of advanced copper mu...