The Investigation for Properties of Hafnium Oxide Films Prepared by Magentron Sputtering

[[abstract]]氧化鉿(HfO2)薄膜是被廣泛研究的光學薄膜，在光學元件上也有相當多的應用。HfO2薄膜的性質深受其製備方法和製備參數的影響，為了在低溫製程裡，獲得具疏水特性的HfO2光學薄膜，本研究使用射頻磁控濺鍍法來沈積HfO2薄膜，探討射頻功率、基板溫度、氧氣/氬氣比率及鎢(W)含量對HfO2薄膜之光學及疏水性質的影響。實驗結果顯示，當氧氣/氬氣比率增加為0.21時，可以同時提升HfO2薄膜的疏水特性、光能隙及可見光穿透率。[[abstract]]Hafnium oxide (HfO2) films were investigated by many people, and were used in optical devices. The characteristics of HfO2 films were strongly affected by the preparation conditions and experimental parameters. In order to obtain good hydrophobic and optical films at low substrate temperature, HfO2 films were deposited by RF magnetron sputtering in this study. The effects of RF power, substrate temperature, the ratio of O2 to Ar pressure and W content on the optical and hydrophobic properties of HfO2 films were investigated. The results indicated that HfO2 film exhibited better hydrophobicity, higher optical energy gap and higher visible transmission as the ratio of O2 to Ar pressure increased to 0.21.[[note]]碩