Study of CMOS Process Compatible SAW Sensors with Aluminum Nitride Thin Film

[[abstract]]本?文以CMOS製程相容之表面聲波感測器研究為主題。先?用鈮酸鋰基板為壓電材?，改變交指叉?電極寬?及交指叉?電極對?等設計??，藉由高頻S???測機台?做電性?測，以?解?同設計條件對表面聲波感測器特性之影響。使用直?脈衝濺鍍，改變製程溫?，氮氣比?，靶材至基板距?(TSD)等??，沉積具有(002) 高指向性氮化鋁薄膜，藉由XRD，AFM，SEM與高頻S???測機台等儀器之材?與電性?測，?解?同鍍膜條件對氮化鋁材?特性之影響。 實驗結果顯示表面聲波感測器其頻寬與交指叉?電極寬?及對?成反比，而插入損失所損失的能?值也與指叉?電極寬?及對?成反比，溫?漂移係??受交指叉?電極設計影響，並無熱遲滯現象，將可做為無線溫?感測器之用，而氮化鋁薄膜之最佳化，將可符合CMOS製程相容之氮化鋁薄膜表面聲波感測器應用需求。[[abstract]]In this thesis, the CMOS compatible SAW sensor with AlN thin film was studied. The SAW sensors on LiNbO3 substrate were first fabricated with different IDT design parameters, such as the line width and finger pairs. The electrical characterization was measured by high frequency S parameter analysis. Then, the pulse DC magnetron sputter was used to deposit c-axis (002) AlN thin film with different parameters, such as temperature, N2/Ar ratio, and target to substrate distance (TSD). The material and electrical characterizations were studied by XRD, AFM, SEM analysis and high frequency S parameter analysis. In our results, the bandwidth of SAW devices are inversely proportional to the line width and finger pairs; the insertion loss of SAW devices are also inversely proportional to the line width and finger pairs. The SAW sensors show no thermal hysteresis behavior and its temperature coefficient of frequency does not change with the different IDT design parameters. The pulse DC sputter AlN thin film was optimized and this thin film will be suitable for the future CMOS compatible SAW sensor applications.[[note]]碩