Study of high speed 4x10 Gbps AOC

[[abstract]]本篇?文提出4x10 Gbps 高速傳輸之主動光纜(Active optical cable)的研究，使用Iptronics的4x12 Gbps面射型雷射驅動IC以及4x12 Gbps轉阻放大器搭配ULM(Philip)的四顆獨立的面射型雷射及感光二極體，在矽光學平台(silicon optical bench)上， 構成一微型化的光電轉換模組，在兩種不同結構下的傳輸眼圖(eye diagram)特性的比較以及改善。在結構A時(環隆科技已取得美國專利，專利公開號2011.0052202)，由於在此結構下面射型雷射及感光二極體先覆晶在矽基座次模組上之後，再將其翻轉使其正對光纖發射/接收，如此雖光接收強度較強但卻導致面射型雷射驅動IC(轉阻放大器)到面射型雷射(感光二極體)打線長度較長，其特性在10Gbps的情形下的eye diagram明顯無法達到期望的結果，在結構B時(環隆科技專利申請中)，面射型雷射以及感光二極體覆晶在B結構的矽基座底座上並與覆晶在PCB上的面射型雷射驅動IC(轉阻放大器)位於相同的平面,如此一來打線的長度縮短很多，實驗證明打線的長度太長在高速時眼圖特性變差。 關鍵詞：主動光纜、矽光學平台、面射型雷射、感光二極體。[[abstract]]This main purpose of thesis is to realize 4x10 Gbps high-speed transmission AOC(Active Optical Cable),with components Iptronics’ 4x12 Gbps VCSEL driver IC and 4x12 Gbps Transimpedance amplifier to integrate Philip’s four independent VCSELs and photodiodes. These components were integrated on a SiOB(Silicon Optical Bench) to constitute a miniaturization of the photoelectric conversion module, the transmission characteristics of two different structure comparison and improvement. In the structure A (Structure A has been made in the United States patent, patent disclosure No. 2011.0052202),VCSEL/Photodiode was die bonded on the SiOB submount in advance then flip it to face multimode fiber directly so that the photodiode could receive more optical power but lead to the wire bond length longer from VCSEL to VCSEL deriver IC, it caused the characteristics in the case 10Gbps eye diagram, jitter, BER could not archive the desired result. In the structure B(Structure B technology patent applications), VCSEL/Photodiode was die bonded on the SiOB base of Structure B and form a common plane with die bonded VCSEL Driver IC/Transimpedance amplifier of PCB, such as a result the length of wire bond to more shorten, we proof that the length too long of the wire bond will cause characteristic deterioration at high speed transmission. Key Words: Active Optical Cable, Silicon Optical Bench, VCSEL, Photo Diode.[[note]]碩