Add to ORKGIn this letter we extract the parameters of the charge equations of a microwave transistor nonlinear model which is available in commercial CAD tools. In particular, the charge model parameters are extracted starting from small- and large-signal measurements. A better accuracy can be achieved when using large-signal measurements since the model parameters are obtained from experimental data which better reproduce the actual operating condition of the device under test. An advanced 0.15 x 300 mu m(2) pHEMT in GaAs technology, aimed at cold-FET mixer design, is considered as case study
In the paper, the nonlinear model of a microwave transistor is extracted from large-signal measureme...
In this paper an identification procedure for an FET analytical model oriented to µm- and mm-wave ap...
A new method is proposed for the accurate experimental characterization and fully automated extracti...
In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear...
In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear...
This paper discusses a procedure to extract large-signal models for microwave transistors. By using ...
In this work we describe a novel technique for the extraction of nonlinear model for microwave trans...
In this work we describe a novel technique for the extraction of nonlinear model for microwave trans...
Nonlinear models of microwave transistors are essential for the design of high-frequency nonlinear c...
The I-V dynamic characteristics of field-effect-transistors (FET) are determined through a nonlinear...
We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model pa...
Measurements of low-and high-frequency vector-calibrated large-signal waveforms are exploited in thi...
Measurements of low- and high-frequency vector-calibrated large-signal waveforms are exploited in th...
The small-signal equivalent circuit modeling of microwave field-effect transistors (FETs) is an ever...
This paper presents a new symmetrical field-effect transistor (FET) model suitable for microwave swi...
In the paper, the nonlinear model of a microwave transistor is extracted from large-signal measureme...
In this paper an identification procedure for an FET analytical model oriented to µm- and mm-wave ap...
A new method is proposed for the accurate experimental characterization and fully automated extracti...
In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear...
In this letter we extract the parameters of the charge equations of a microwave transistor nonlinear...
This paper discusses a procedure to extract large-signal models for microwave transistors. By using ...
In this work we describe a novel technique for the extraction of nonlinear model for microwave trans...
In this work we describe a novel technique for the extraction of nonlinear model for microwave trans...
Nonlinear models of microwave transistors are essential for the design of high-frequency nonlinear c...
The I-V dynamic characteristics of field-effect-transistors (FET) are determined through a nonlinear...
We extract the nonlinear model of a 0.15 μm GaAs pHEMT for cold-FET mixer applications. The model pa...
Measurements of low-and high-frequency vector-calibrated large-signal waveforms are exploited in thi...
Measurements of low- and high-frequency vector-calibrated large-signal waveforms are exploited in th...
The small-signal equivalent circuit modeling of microwave field-effect transistors (FETs) is an ever...
This paper presents a new symmetrical field-effect transistor (FET) model suitable for microwave swi...
In the paper, the nonlinear model of a microwave transistor is extracted from large-signal measureme...
In this paper an identification procedure for an FET analytical model oriented to µm- and mm-wave ap...
A new method is proposed for the accurate experimental characterization and fully automated extracti...