Add to ORKGMolecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Successful Bi incorporation for 2% is achieved, and up to 70% of the incorporated Bi atoms are at substitutional sites. The effects of growth parameters on Bi incorporation and surface morphology are studied. Strong In and Ga inter-diffusion induced by Bi incorporation is observed and discussed
We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentrat...
ii GaAs1-xBix is an exciting new semiconductor alloy with numerous promising applications. Incorpora...
The growth of epitaxial InBixSb(1-x) (x = 4 atomic %) layers on highly lattice mis-matched semi-insu...
Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Succes...
Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorpo...
Bi thin films have been grown on InSb(1 1 1)A/B substrates using molecular beam epitaxy. We have obs...
Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorpo...
GaSb1-xBix thin film was grown on a 2 inch GaSb substrate by molecular beam epitaxy (MBE) without su...
InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi compositi...
The effects of Bi, In flux and PH3 pressure on Bi incorporation, structural and transport properties...
The effects of Bi, In flux and PH3 pressure on Bi incorporation, structural and transport properties...
We have successfully grown BiSb alloy thin films on CdTe(111)B over a wide range of Sb compositions ...
We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentrat...
InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substra...
InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substra...
We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentrat...
ii GaAs1-xBix is an exciting new semiconductor alloy with numerous promising applications. Incorpora...
The growth of epitaxial InBixSb(1-x) (x = 4 atomic %) layers on highly lattice mis-matched semi-insu...
Molecular beam epitaxy growth for InSb1-xBix thin films on (100) GaAs substrates is reported. Succes...
Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorpo...
Bi thin films have been grown on InSb(1 1 1)A/B substrates using molecular beam epitaxy. We have obs...
Molecular beam epitaxy for GaSb1-xBix is investigated in this article. The growth window for incorpo...
GaSb1-xBix thin film was grown on a 2 inch GaSb substrate by molecular beam epitaxy (MBE) without su...
InPBi thin films have been grown on InP by gas source molecular beam epitaxy. A maximum Bi compositi...
The effects of Bi, In flux and PH3 pressure on Bi incorporation, structural and transport properties...
The effects of Bi, In flux and PH3 pressure on Bi incorporation, structural and transport properties...
We have successfully grown BiSb alloy thin films on CdTe(111)B over a wide range of Sb compositions ...
We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentrat...
InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substra...
InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substra...
We report the first successful growth of InGaPBi single crystals on InP substrate with Bi concentrat...
ii GaAs1-xBix is an exciting new semiconductor alloy with numerous promising applications. Incorpora...
The growth of epitaxial InBixSb(1-x) (x = 4 atomic %) layers on highly lattice mis-matched semi-insu...