The observation of a high-mobility two-dimensional electron gas between two insulating complex oxides, especially LaAlO3/SrTiO3, has enhanced the potential of oxides for electronics. The occurrence of this conductivity is believed to be driven by polarization discontinuity, leading to an electronic reconstruction. In this scenario, the crystal orientation has an important role and no conductivity would be expected, for example, for the interface between LaAlO3 and (110)-oriented SrTiO3, which should not have a polarization discontinuity. Here we report the observation of unexpected conductivity at the LaAlO3/SrTiO3 interface prepared on (110)-oriented SrTiO3, with a LaAlO3-layer thickness-dependent metal-insulator transition. Density functi...
International audienceThe crystal structure of bulk SrTiO 3 (STO) transitions from cubic to tetragon...
The physical mechanisms responsible for the formation of a two-dimensional electron gas at the inter...
Oxide growth with semiconductor-like accuracy allows the fabrication of atomically precise thin film...
The observation of a high-mobility two-dimensional electron gas between two insulating complex oxide...
The observation of a high-mobility two-dimensional electron gas between two insulating complex oxide...
The two-dimensional electron gas (2DEG) formed at the perovskite oxides heterostructures is of great...
Complex oxides exhibit a wide range of physical properties making them very attractive for future e...
The recently discovered conductive interfaces between oxide-insulators [1] are potentially new two-d...
The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO) offers a unique play...
The relative importance of atomic defects and electron transfer in explaining conductivity at the cr...
Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron...
Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results ...
Extraordinary phenomena can occur at the interface between two oxide materials. A spectacular exampl...
Extraordinary phenomena can occur at the interface between two oxide materials. A spectacular exampl...
Extraordinary phenomena can occur at the interface between two oxide materials. A spectacular exampl...
International audienceThe crystal structure of bulk SrTiO 3 (STO) transitions from cubic to tetragon...
The physical mechanisms responsible for the formation of a two-dimensional electron gas at the inter...
Oxide growth with semiconductor-like accuracy allows the fabrication of atomically precise thin film...
The observation of a high-mobility two-dimensional electron gas between two insulating complex oxide...
The observation of a high-mobility two-dimensional electron gas between two insulating complex oxide...
The two-dimensional electron gas (2DEG) formed at the perovskite oxides heterostructures is of great...
Complex oxides exhibit a wide range of physical properties making them very attractive for future e...
The recently discovered conductive interfaces between oxide-insulators [1] are potentially new two-d...
The interface between two wide band-gap insulators, LaAlO3 and SrTiO3 (LAO/STO) offers a unique play...
The relative importance of atomic defects and electron transfer in explaining conductivity at the cr...
Emergent phenomena, including superconductivity and magnetism, found in the two-dimensional electron...
Interplay of spin, charge, orbital and lattice degrees of freedom in oxide heterostructures results ...
Extraordinary phenomena can occur at the interface between two oxide materials. A spectacular exampl...
Extraordinary phenomena can occur at the interface between two oxide materials. A spectacular exampl...
Extraordinary phenomena can occur at the interface between two oxide materials. A spectacular exampl...
International audienceThe crystal structure of bulk SrTiO 3 (STO) transitions from cubic to tetragon...
The physical mechanisms responsible for the formation of a two-dimensional electron gas at the inter...
Oxide growth with semiconductor-like accuracy allows the fabrication of atomically precise thin film...