Add to ORKGElectron injection into oxide traps of metal/high-k oxide/interlayer/silicon structures is investigated by modeling. We demonstrate the influence on flat-band voltage by the sharpness of the interlayer/silicon interface and by the properties of traps in the oxide. Since charge carrier injection in this kind of structures may take place by two different processes simultaneously, excluding one or the other in the interpretation of data may lead to considerable erroneous results in extracted values of capture cross sections
99 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.A bipolar-MOS transistor (BIMO...
Dur ing high voltage stressing of thin silicon oxides, traps are generated inside of the oxides and ...
We carried out a unique and systematic characterization of single Si/SiO2 interface traps using the ...
Electron injection into oxide traps of metal/high-k oxide/interlayer/silicon structures is investiga...
172 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.Silicon dioxide has had a dom...
Electron capture and excess current after substrate hot-hole injection into 60 and 131 A silicon dio...
Mechanisms of the charge transfer, the charge trapping, and the generation of positive charge during...
International audienceThe charging and discharging properties of electron traps created by hot‐carri...
The continued efforts to improve performance and decrease size of semiconductor logic devices are fa...
Change in small-signal gate-to-drain capacitance of an n-metal-oxide semiconductor field effect tran...
When silicon oxide is stressed at high voltages, traps are generated inside the oxide and at the oxi...
An experimental investigation on oxide positive charge buildup in sub 3-nm silicon dioxide (SiO<sub>...
International audienceCarrier injection mechanisms have been compared in surface p-channel metal–oxi...
Meta1-oxide-semiconductor capacitors were fabricated with 2800 A thick dry grown thermal oxides unde...
In this letter, we report a novel approach to quantitative determination of charge trapping in gate ...
99 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.A bipolar-MOS transistor (BIMO...
Dur ing high voltage stressing of thin silicon oxides, traps are generated inside of the oxides and ...
We carried out a unique and systematic characterization of single Si/SiO2 interface traps using the ...
Electron injection into oxide traps of metal/high-k oxide/interlayer/silicon structures is investiga...
172 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.Silicon dioxide has had a dom...
Electron capture and excess current after substrate hot-hole injection into 60 and 131 A silicon dio...
Mechanisms of the charge transfer, the charge trapping, and the generation of positive charge during...
International audienceThe charging and discharging properties of electron traps created by hot‐carri...
The continued efforts to improve performance and decrease size of semiconductor logic devices are fa...
Change in small-signal gate-to-drain capacitance of an n-metal-oxide semiconductor field effect tran...
When silicon oxide is stressed at high voltages, traps are generated inside the oxide and at the oxi...
An experimental investigation on oxide positive charge buildup in sub 3-nm silicon dioxide (SiO<sub>...
International audienceCarrier injection mechanisms have been compared in surface p-channel metal–oxi...
Meta1-oxide-semiconductor capacitors were fabricated with 2800 A thick dry grown thermal oxides unde...
In this letter, we report a novel approach to quantitative determination of charge trapping in gate ...
99 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1988.A bipolar-MOS transistor (BIMO...
Dur ing high voltage stressing of thin silicon oxides, traps are generated inside of the oxides and ...
We carried out a unique and systematic characterization of single Si/SiO2 interface traps using the ...