Add to ORKGA 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP HEMT process. A packaged LNA has been measured at both 300 K and 15 K. At 300 K the measured minimum noise temperature was 48 K at 7 GHz. At 15 K the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5-13 GHz band. The gain was between 34 dB and 40 dB at 300 K and between 38 dB and 44 dB at 4 K
In this paper we present the design and measurement results, both on-wafer and in package, of an ult...
In this paper we present the design and measurement results, both on-wafer and in package, of an ult...
In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) ...
0.5–13 and 24–40 GHz broadband cryogenic monolithic- microwave integrated-circuit low-noise amplifie...
0.5–13 and 24–40 GHz broadband cryogenic monolithic-microwave integrated-circuit low-noise amplifier...
An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogeni...
An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogeni...
This paper reports the development of a cryogenic wideband low-noise amplifier based on a 50-nm meta...
An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at c...
An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at c...
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50...
In this paper, we describe two monolithic millimeter-wave integrated circuit (MMIC) low noise amplif...
MMIC Broadband Low Noise Amplifiers (LNA) for radio astronomy applications with 100 nm GaAs metamorp...
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50...
In this paper we present the design and measurement results, both on-wafer and in package, of an ult...
In this paper we present the design and measurement results, both on-wafer and in package, of an ult...
In this paper we present the design and measurement results, both on-wafer and in package, of an ult...
In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) ...
0.5–13 and 24–40 GHz broadband cryogenic monolithic- microwave integrated-circuit low-noise amplifie...
0.5–13 and 24–40 GHz broadband cryogenic monolithic-microwave integrated-circuit low-noise amplifier...
An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogeni...
An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogeni...
This paper reports the development of a cryogenic wideband low-noise amplifier based on a 50-nm meta...
An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at c...
An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at c...
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50...
In this paper, we describe two monolithic millimeter-wave integrated circuit (MMIC) low noise amplif...
MMIC Broadband Low Noise Amplifiers (LNA) for radio astronomy applications with 100 nm GaAs metamorp...
In this paper we report ultra-low-noise amplifier modules and amplifier module chains for V-band (50...
In this paper we present the design and measurement results, both on-wafer and in package, of an ult...
In this paper we present the design and measurement results, both on-wafer and in package, of an ult...
In this paper we present the design and measurement results, both on-wafer and in package, of an ult...
In this paper, monolithic microwave integrated circuit (MMIC) broadband low-noise amplifiers (LNAs) ...