An X-band low phase noise AlGaN-GaN HEMT MMIC push-push oscillator is designed, fabricated, and characterized. The oscillator is based on two common gate Colpitts oscillators. A minimum phase noise of -101 dBc at 100 kHz offset is achieved. The MMIC was fabricate in an 'in-house process' at Chalmers University of Technology
International audienceAlthough GaN technologies were initially developed for solid state source ampl...
The thesis considers design of low phase noise oscillators, given the boundary condition of the used...
A novel ultra-low phase noise and high power integrated oscillator is presented in this letter. The ...
An X-band low phase noise AlGaN-GaN HEMT MMIC push-push oscillator is designed, fabricated, and char...
International audienceAlthough GaN technologies were initially developed for solid state source ampl...
International audienceAlthough GaN technologies were initially developed for solid state source ampl...
Abstract — A monolithic AlGaN/GaN HEMT voltage-controlled oscillator has been designed, fabricated a...
This paper reports on an ultra-low phase-noise oscillator based on a GaN HEMT monolithic microwave i...
This paper presents an X-band balanced Colpitts oscillator in GaN HEMT technology and a method to ca...
In the paper the advantages of the push-push oscillator topology in terms of phase noise performance...
This paper presents an X-band balanced Colpitts oscillator in GaN HEMT technology and a method to ca...
In the paper the advantages of the push-push oscillator topology in terms of phase noise performance...
In the paper the advantages of the push-push oscillator topology in terms of phase noise performance...
This paper reports on a negative resistance 15 GHz GaN HEMT oscillator using a quasi-lumped integrat...
This paper reports on a negative resistance 15 GHz GaN HEMT oscillator using a quasi-lumped integrat...
International audienceAlthough GaN technologies were initially developed for solid state source ampl...
The thesis considers design of low phase noise oscillators, given the boundary condition of the used...
A novel ultra-low phase noise and high power integrated oscillator is presented in this letter. The ...
An X-band low phase noise AlGaN-GaN HEMT MMIC push-push oscillator is designed, fabricated, and char...
International audienceAlthough GaN technologies were initially developed for solid state source ampl...
International audienceAlthough GaN technologies were initially developed for solid state source ampl...
Abstract — A monolithic AlGaN/GaN HEMT voltage-controlled oscillator has been designed, fabricated a...
This paper reports on an ultra-low phase-noise oscillator based on a GaN HEMT monolithic microwave i...
This paper presents an X-band balanced Colpitts oscillator in GaN HEMT technology and a method to ca...
In the paper the advantages of the push-push oscillator topology in terms of phase noise performance...
This paper presents an X-band balanced Colpitts oscillator in GaN HEMT technology and a method to ca...
In the paper the advantages of the push-push oscillator topology in terms of phase noise performance...
In the paper the advantages of the push-push oscillator topology in terms of phase noise performance...
This paper reports on a negative resistance 15 GHz GaN HEMT oscillator using a quasi-lumped integrat...
This paper reports on a negative resistance 15 GHz GaN HEMT oscillator using a quasi-lumped integrat...
International audienceAlthough GaN technologies were initially developed for solid state source ampl...
The thesis considers design of low phase noise oscillators, given the boundary condition of the used...
A novel ultra-low phase noise and high power integrated oscillator is presented in this letter. The ...