In this thesis, a frequency doubler is designed to produce a broadband local oscillator signal (LO) around 200 GHz. A linear array of four Schottky varactors are incorporated into a GaAs flip-chip in a balanced anti-series configuration [1], so as to generate the second harmonic of the incoming signal. The varactor chip is soldered to a suspended microstrip quartz circuit, which constitutes the input/output embedding circuit, the DC bias filter and the output E-probe. A E-plane waveguide split block is used to accommodate the doubler quartz circuit, along with an input (WR-10) and an output (WR-5) waveguide interface. Generally, an iterative design process is carried out to make a trade-off among the doubler bandwidth, the conversion effici...
An active single-ended 28-6 GHz MMIC frequency doubler based on a commercial GaAs HEMT process is pr...
The design and characterization of a 28-56 GHz frequency doubler based on a commercial foundry GaAs ...
This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation fre...
Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned ful...
Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned ful...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
This paper describes the design and demonstration of a 135−190 GHz self-biased broadband frequ...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
A broadband planar Schottky balanced doubler at 800 GHz has been designed and built. The design util...
An active single-ended 28-6 GHz MMIC frequency doubler based on a commercial GaAs HEMT process is pr...
An active single-ended 28-6 GHz MMIC frequency doubler based on a commercial GaAs HEMT process is pr...
The design and characterization of a 28-56 GHz frequency doubler based on a commercial foundry GaAs ...
This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation fre...
Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned ful...
Paper presents the design and fabrication steps as well as measurement results for a fixed-tuned ful...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
This paper describes the design and demonstration of a 135−190 GHz self-biased broadband frequ...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
International audienceWe report the fabrication of GaAs Schottky diodes to be integrated in a 75/150...
A broadband planar Schottky balanced doubler at 800 GHz has been designed and built. The design util...
An active single-ended 28-6 GHz MMIC frequency doubler based on a commercial GaAs HEMT process is pr...
An active single-ended 28-6 GHz MMIC frequency doubler based on a commercial GaAs HEMT process is pr...
The design and characterization of a 28-56 GHz frequency doubler based on a commercial foundry GaAs ...
This paper presents a frequency doubler operating at G-band that exceeds the maximum oscillation fre...