Add to ORKGThis paper presents the design and implementation of an inverse class F power amplifier (PA) using a high power GaN HEMT transistor. For a 3.5 GHz continuous wave (CW) signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78 %, a drain efficiency of 82 %, a gain of 12 dB, and an output power of 11W. Moreover, drain efficiency is maintained over 60 % and the output power level is higher than 10W over 300 MHz bandwidth. To our knowledge, the presented power amplifier represents the highest efficiency for all switching mode PAS that have been reported for high power applications at frequencies above 2 GHz
The experimental results of an ultra-wideband high-efficiency power amplifier (PA) in GaN technology...
GaN integrated circuit technologies have dramatically progressed over the recent years. The prominen...
This article presents the winning power amplifier implemented with a gallium nitride (GaN) high elec...
This paper presents the design and implementation of an inverse class F power amplifier (PA) using a...
Abstract—A class B and a class F power amplifier are described using a GaN HEMT device. They both we...
This paper investigates the development of an inverse class-F design procedure for obtaining very hi...
This paper reports the design, implementation, and experimental results of two high efficiency GaN-H...
This paper presents the design and simulation of an inverse Class F (F-1) radio frequency power ampl...
Due to the high increase in and demand for a wide assortment of applications that require low-cost, ...
Abstract-Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEM...
This paper presents the design and realization of a highly efficient broadband class-F power amplifi...
The design and implementation of a high efficiency Class-J mode RF power amplifier (PA) for wireless...
International audienceActivities have been carried out to determine the best electrical operating co...
In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized f...
A novel, highly efficient and broadband RF power amplifier (PA) operating in “continuous class-F” mo...
The experimental results of an ultra-wideband high-efficiency power amplifier (PA) in GaN technology...
GaN integrated circuit technologies have dramatically progressed over the recent years. The prominen...
This article presents the winning power amplifier implemented with a gallium nitride (GaN) high elec...
This paper presents the design and implementation of an inverse class F power amplifier (PA) using a...
Abstract—A class B and a class F power amplifier are described using a GaN HEMT device. They both we...
This paper investigates the development of an inverse class-F design procedure for obtaining very hi...
This paper reports the design, implementation, and experimental results of two high efficiency GaN-H...
This paper presents the design and simulation of an inverse Class F (F-1) radio frequency power ampl...
Due to the high increase in and demand for a wide assortment of applications that require low-cost, ...
Abstract-Two simple class-F NVI1VIIC power amplifiers are described using 0.7tm field-plated GaN HEM...
This paper presents the design and realization of a highly efficient broadband class-F power amplifi...
The design and implementation of a high efficiency Class-J mode RF power amplifier (PA) for wireless...
International audienceActivities have been carried out to determine the best electrical operating co...
In this study, balanced and single ended class-E power amplifiers (PAs) were designed and realized f...
A novel, highly efficient and broadband RF power amplifier (PA) operating in “continuous class-F” mo...
The experimental results of an ultra-wideband high-efficiency power amplifier (PA) in GaN technology...
GaN integrated circuit technologies have dramatically progressed over the recent years. The prominen...
This article presents the winning power amplifier implemented with a gallium nitride (GaN) high elec...