The performance of recently developed Large Signal (LS) HBT model was evaluated with extensive LS measurements like Power spectrum, Load pull and Inter-modulation investigations. Proposed model has adopted temperature dependent leakage resistance and a simplified capacitance models. The model was implemented in ADS as SDD. Important feature of the model is that the main model parameters are taken directly from measurements in rather simple and understandable way. Results show good accuracy despite the simplicity of the model. To our knowledge the HBT model is one of a few HBT models which can handle high current & Power HBT devices, with significantly less model parameters with good accuracy
103 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.This work describes a modelin...
International audienceThis paper presents a setup that enables wide-band (in-band and out-of-band) m...
The development of computer aided design tools for microwave circuit design has increased the intere...
A new heterojunction bipolar transistor (HBT) model has been implemented in TECAP. The paper describ...
A new SPICE-type, HBT large-signal model is described with special emphasis on the associated parame...
A physical basis for large-signal HBT modeling was established in terms of transit times using a Mon...
Description of an eight mode heterojunction bipolar transistor model suitable for circuit simulation...
A new large signal electrothermal Heterojunction Bipolar Transistor (HBT) model with original parame...
Abstract — Transcapacitances and bias dependent total time delay and base resistance expressions fo...
A new GaInP/GaAs HBT model for power applications is presented. It is based on the Gummel-Poon model...
Rapid improvements in Heterojunction Bipolar Transistor (HBT) device performance have made power app...
ABSTRACT-- We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and...
heterojunction bipolar transistors. In this work an improved large-signal transistor model is develo...
In this paper the applicability of the VBIC95 model for consistent modeling of SiGe HBT devices is ...
Recently new behavioral model formulations, i.e. PHD model, X-parameters, have been shown to robustl...
103 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.This work describes a modelin...
International audienceThis paper presents a setup that enables wide-band (in-band and out-of-band) m...
The development of computer aided design tools for microwave circuit design has increased the intere...
A new heterojunction bipolar transistor (HBT) model has been implemented in TECAP. The paper describ...
A new SPICE-type, HBT large-signal model is described with special emphasis on the associated parame...
A physical basis for large-signal HBT modeling was established in terms of transit times using a Mon...
Description of an eight mode heterojunction bipolar transistor model suitable for circuit simulation...
A new large signal electrothermal Heterojunction Bipolar Transistor (HBT) model with original parame...
Abstract — Transcapacitances and bias dependent total time delay and base resistance expressions fo...
A new GaInP/GaAs HBT model for power applications is presented. It is based on the Gummel-Poon model...
Rapid improvements in Heterojunction Bipolar Transistor (HBT) device performance have made power app...
ABSTRACT-- We developed a robust large-signal model for InP/InGaAs HBTs. DC, small-signal, noise and...
heterojunction bipolar transistors. In this work an improved large-signal transistor model is develo...
In this paper the applicability of the VBIC95 model for consistent modeling of SiGe HBT devices is ...
Recently new behavioral model formulations, i.e. PHD model, X-parameters, have been shown to robustl...
103 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 2005.This work describes a modelin...
International audienceThis paper presents a setup that enables wide-band (in-band and out-of-band) m...
The development of computer aided design tools for microwave circuit design has increased the intere...