BESOI wafers are commonly used for MEMS fabrication and their quality is thus of great importance for the functionality and reliability of the device. It is therefore important to be aware that there is a manufacturing problem with boron impurity at the Si/SiO2 layer in the SOI wafer This impurity is not specified when purchasing the wafer and can alter the background doping up to several μm:s from the BOX, resulting in non-functional piezoresistive devices and unwanted limitation in membrane thickness. In this work we present guidelines on how to detect and counteract this impurity
silicio epitassiale, impurezze, assorbimento otticoBoron accumulation was observed close to the inte...
An investigation into the effects of masking oxide on the diffusion of boron into silicon has been m...
Abstract approved Redacted for Privacy (Major professor).. A technique was investigated in which a s...
In this work, the electrical performance of piezoresistive devices fabricated on thinned SOI wafers ...
AbstractAbsolute piezoresistive pressure sensors often use direct wafer bonding of SOI with the etch...
For CMOS technology, generations beyond the 65 nm node a major goal is achieving highly activated, u...
The International Roadmap for Semiconductors requires ultrashallow, highly activated, abrupt dopant ...
P -type ultrashallow junctions are widely fabricated using Ge preamorphization prior to ultralow-ene...
International audienceThe effect of the buried Si-SiO 2 interface on the transient enhanced diffusio...
P-type ultrashallow junctions are widely fabricated using Ge preamorphization prior to ultralow-ener...
Formation of highly activated, ultra-shallow and abrupt profiles is a key requirement for the next g...
This paper discusses boron doping using metal oxide semiconductor structure (poly-Si/SiOs/Si). The t...
The fabrication of preamorphized p-type ultrashallow junctions in silicon-on-insulator (SOI) has bee...
The fabrication of preamorphized p-type ultrashallow junctions in silicon-on-insulator (SOI) has bee...
Abstract- This letter reports that the boron penetration through the thin gate oxide into the Si sub...
silicio epitassiale, impurezze, assorbimento otticoBoron accumulation was observed close to the inte...
An investigation into the effects of masking oxide on the diffusion of boron into silicon has been m...
Abstract approved Redacted for Privacy (Major professor).. A technique was investigated in which a s...
In this work, the electrical performance of piezoresistive devices fabricated on thinned SOI wafers ...
AbstractAbsolute piezoresistive pressure sensors often use direct wafer bonding of SOI with the etch...
For CMOS technology, generations beyond the 65 nm node a major goal is achieving highly activated, u...
The International Roadmap for Semiconductors requires ultrashallow, highly activated, abrupt dopant ...
P -type ultrashallow junctions are widely fabricated using Ge preamorphization prior to ultralow-ene...
International audienceThe effect of the buried Si-SiO 2 interface on the transient enhanced diffusio...
P-type ultrashallow junctions are widely fabricated using Ge preamorphization prior to ultralow-ener...
Formation of highly activated, ultra-shallow and abrupt profiles is a key requirement for the next g...
This paper discusses boron doping using metal oxide semiconductor structure (poly-Si/SiOs/Si). The t...
The fabrication of preamorphized p-type ultrashallow junctions in silicon-on-insulator (SOI) has bee...
The fabrication of preamorphized p-type ultrashallow junctions in silicon-on-insulator (SOI) has bee...
Abstract- This letter reports that the boron penetration through the thin gate oxide into the Si sub...
silicio epitassiale, impurezze, assorbimento otticoBoron accumulation was observed close to the inte...
An investigation into the effects of masking oxide on the diffusion of boron into silicon has been m...
Abstract approved Redacted for Privacy (Major professor).. A technique was investigated in which a s...