Add to ORKGElectron traps in HfO2 have been investigated by measuring thermally stimulated current (TSC). Two different interface regions have been identified where captured electrons interact with energy band states. The two domains are separated by and close to the “interlayer” of SiOx commonly present in high-k/silicon stacks. On the inner side, between SiOx and silicon, we find an irregular silicon crystal which we interpret as a source for interface states. At the SiOx/HfO2 interface, we find a high concentration of unstable traps with a strong influence on the electric field distribution in the gate stack
Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equiva...
This thesis describes investigations in relation to the search for materials with high dielectric co...
Oxygen-related point defects can provide fixed charge or act as charge trapping centers in high-k ga...
Electron traps in HfO2 have been investigated by measuring thermally stimulated current (TSC). Two d...
Thermally stimulated currents (TSCs) have been measured to investigate electron traps in HfO2 prepar...
The transition regions of GdSiO/SiOx and HfO2/SiOx interfaces have been studied with the high-k laye...
Electron trapping near the Si/SiO{sub 2} interface plays a crucial role in mitigating the response o...
The properties of charge carrier traps in the oxide bulk, at high-k/silicon transition regions, at t...
The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode ...
Interface traps in the Si/SiO2 system have been examined by adapted-junction space-charge methods. P...
The presence of carrier traps, at the Si-SiO2 interface, is at the origin of various instability phe...
Using a method based on the frequency dependence of capacitance, cross sections for electron capture...
Abstract—Replacing SiON by high-κ layers is a pressing issue for CMOS technologies. The presence of ...
In this work, we present experimental results examining the energy distribution of the relatively hi...
A review of the electronic or electron and hole traps at Si/SiO2 interfaces of MOS capacitances and ...
Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equiva...
This thesis describes investigations in relation to the search for materials with high dielectric co...
Oxygen-related point defects can provide fixed charge or act as charge trapping centers in high-k ga...
Electron traps in HfO2 have been investigated by measuring thermally stimulated current (TSC). Two d...
Thermally stimulated currents (TSCs) have been measured to investigate electron traps in HfO2 prepar...
The transition regions of GdSiO/SiOx and HfO2/SiOx interfaces have been studied with the high-k laye...
Electron trapping near the Si/SiO{sub 2} interface plays a crucial role in mitigating the response o...
The properties of charge carrier traps in the oxide bulk, at high-k/silicon transition regions, at t...
The interfacial properties between silicon and hafnium oxide (HfO2) are explored by the gated-diode ...
Interface traps in the Si/SiO2 system have been examined by adapted-junction space-charge methods. P...
The presence of carrier traps, at the Si-SiO2 interface, is at the origin of various instability phe...
Using a method based on the frequency dependence of capacitance, cross sections for electron capture...
Abstract—Replacing SiON by high-κ layers is a pressing issue for CMOS technologies. The presence of ...
In this work, we present experimental results examining the energy distribution of the relatively hi...
A review of the electronic or electron and hole traps at Si/SiO2 interfaces of MOS capacitances and ...
Controlling monolayer Si oxide at the HfO2/Si interface is a challenging issue in scaling the equiva...
This thesis describes investigations in relation to the search for materials with high dielectric co...
Oxygen-related point defects can provide fixed charge or act as charge trapping centers in high-k ga...