This experimental study aims at finding the optimum barrier thickness in heterostructure barrier varactor (HBV) diodes, to improve the diode efficiency especially for high-power frequency multiplier applications. The influence of barrier thickness on the conduction current is investigated for different biases and device temperatures. We found that for an InP-based HBV, there is an optimum barrier thickness range between 10 to 14 nm which causes the lowest possible leakage current
This thesis describes the Heterostructure Barrier Varactor (HBV) and its application in frequency mu...
We report on a novel diode geometry, with reduced thermal resistance, for Heterostructure Barrier Va...
We report on the design and MBE-growth of heterostructure barrier varactor (HBV) diode materials. Th...
This experimental study aims at finding the optimum barrier thickness in heterostructure barrier var...
This experimental study aims at finding the optimum barrier thickness in heterostructure barrier var...
The heterostructure barrier varactor design method aims at finding optimum epitaxial layer structure...
We describe the Heterostructure Barrier Varactor (HBV) diode and its application in frequency multip...
The Heterostructure Barrier Varactor (HBV), first proposed by Kollberg et al. [1], has a symmetric C...
We present design and analysis of material structures and device geometries for heterostructure barr...
This report deals with fabrication and characterisation of Heterostructure Barrier Varactor (HBV) di...
This thesis deals with fabrication, characterisation and modelling of the Heterostructure Barrier Va...
The Heterostructure Barrier Varactor (HBV) diode and its application in frequency multipliers is rev...
The Heterostructure Barrier Varactor diode and its performance as a varactor frequency multiplier is...
We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduc...
This thesis deals with fabrication, characterisation and modelling of the Heterostructure Barrier Va...
This thesis describes the Heterostructure Barrier Varactor (HBV) and its application in frequency mu...
We report on a novel diode geometry, with reduced thermal resistance, for Heterostructure Barrier Va...
We report on the design and MBE-growth of heterostructure barrier varactor (HBV) diode materials. Th...
This experimental study aims at finding the optimum barrier thickness in heterostructure barrier var...
This experimental study aims at finding the optimum barrier thickness in heterostructure barrier var...
The heterostructure barrier varactor design method aims at finding optimum epitaxial layer structure...
We describe the Heterostructure Barrier Varactor (HBV) diode and its application in frequency multip...
The Heterostructure Barrier Varactor (HBV), first proposed by Kollberg et al. [1], has a symmetric C...
We present design and analysis of material structures and device geometries for heterostructure barr...
This report deals with fabrication and characterisation of Heterostructure Barrier Varactor (HBV) di...
This thesis deals with fabrication, characterisation and modelling of the Heterostructure Barrier Va...
The Heterostructure Barrier Varactor (HBV) diode and its application in frequency multipliers is rev...
The Heterostructure Barrier Varactor diode and its performance as a varactor frequency multiplier is...
We have fabricated heterostructure barrier varactors (HBV) on a copper substrate, which offers reduc...
This thesis deals with fabrication, characterisation and modelling of the Heterostructure Barrier Va...
This thesis describes the Heterostructure Barrier Varactor (HBV) and its application in frequency mu...
We report on a novel diode geometry, with reduced thermal resistance, for Heterostructure Barrier Va...
We report on the design and MBE-growth of heterostructure barrier varactor (HBV) diode materials. Th...