Add to ORKGWe report state-of-the-art performance of tripler efficiency and output power for a new design of AlGaAs-based heterostructure barrier varactor diodes. The new diodes were designed for reduced thermal resistance and series resistance. An efficiency of 4.8% and a maximum output power of 4 mW was achieved at an output frequency of 246 GHz
By the Schrödinger and Poisson equations, we have theoretically investigated AlGaAs/GaAs and InAlAs/...
We report on the design, modelling and analysis of heterostructure barrier varactor (HBV) frequency ...
We describe the Heterostructure Barrier Varactor (HBV) diode and its application in frequency multip...
We report state-of-the-art performance of tripler efficiency and output power for a new design of Al...
The conversion efficiency for planar Al0.7GaAs-GaAs heterostructure barrier varactor triplers is sho...
This thesis deals with fabrication, characterisation and modelling of the Heterostructure Barrier Va...
In this paper we offer a simple set of accurate frequency-domain design equations that can be used t...
This thesis describes the Heterostructure Barrier Varactor (HBV) and its application in frequency mu...
We report the time evolution and the spatial variation of the conduction band, the electric field, a...
We have designed, grown, fabricated and characterized a 111 GHz frequency tripler. An AlAs/InAlAs/In...
Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barr...
This report deals with fabrication and characterisation of Heterostructure Barrier Varactor (HBV) di...
We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. ...
We report on the design and MBE-growth of heterostructure barrier varactor (HBV) diode materials. Th...
The Heterostructure Barrier Varactor (HBV), first proposed by Kollberg et al. [1], has a symmetric C...
By the Schrödinger and Poisson equations, we have theoretically investigated AlGaAs/GaAs and InAlAs/...
We report on the design, modelling and analysis of heterostructure barrier varactor (HBV) frequency ...
We describe the Heterostructure Barrier Varactor (HBV) diode and its application in frequency multip...
We report state-of-the-art performance of tripler efficiency and output power for a new design of Al...
The conversion efficiency for planar Al0.7GaAs-GaAs heterostructure barrier varactor triplers is sho...
This thesis deals with fabrication, characterisation and modelling of the Heterostructure Barrier Va...
In this paper we offer a simple set of accurate frequency-domain design equations that can be used t...
This thesis describes the Heterostructure Barrier Varactor (HBV) and its application in frequency mu...
We report the time evolution and the spatial variation of the conduction band, the electric field, a...
We have designed, grown, fabricated and characterized a 111 GHz frequency tripler. An AlAs/InAlAs/In...
Earlier single-barrier varactors (SBVs) fabricated on GaAs suffered from low Q because of leaky barr...
This report deals with fabrication and characterisation of Heterostructure Barrier Varactor (HBV) di...
We present a high-power InAlAs/InGaAs/InP heterostructure barrier varactor (HBV) frequency tripler. ...
We report on the design and MBE-growth of heterostructure barrier varactor (HBV) diode materials. Th...
The Heterostructure Barrier Varactor (HBV), first proposed by Kollberg et al. [1], has a symmetric C...
By the Schrödinger and Poisson equations, we have theoretically investigated AlGaAs/GaAs and InAlAs/...
We report on the design, modelling and analysis of heterostructure barrier varactor (HBV) frequency ...
We describe the Heterostructure Barrier Varactor (HBV) diode and its application in frequency multip...