Electron capture cross sections of InAs/GaAs quantum dots

The thermal emission rates of electrons from InAs/GaAs quantum dots were measured, to found the capture cross sections in the extremely high region of 10^-11-10^-10 cm². An additional method based on a static measurement at thermal equilibrium was used where the Fermi level was positioned at the free energy level of the quantum dot s shell. A Schottky diode with a plane of QDs grown in its depletion region and back-biased in such a way that the Fermi level coincides with the electron energy level. The Fermi level passes the lowest energy level of the QD, at the voltage marked by V_p in the graphs