MOVPE Growth and Characterizatiofn ZnSe with Highly-doped Sb

Sb-doped ZnSe epitaxial layers were grown on (100) GaAs substrates by MOVPE using DMZn, DMSe, and TESb in atmospheric pressure. In order to investigate the behaviour of Sb, photoluminescoence, four-crystal X-ray diffractometer, secondary ion mass spectrometry, and X-ray photoelectron spectroscopy were used. With the increase of TESb, deep emission peaked at 550nm becomes predominant. The origin seems to be a Zn vacancy and a deep level related to Sb. XPS shows that the bond of Sb-Se increases with increasing TESb. It is made clear that an Sb atom not only occupies on the anti-site but also makes compounds such as Sb2 Se3 and/or the deep acceptor when the Sb-doing becomes high. That is why the effective acceptor concentration remains less than 10^17/cm3