Photodetector: devices for optical data communication

2015-02-11This thesis presents experimental results on a photodetector based on an Indium-Tin-Oxide Schottky-like heterojunction using GaAs nanowire device geometry. By distributing the active detecting area over an array of nanowires, it’s possible to achieve large area detection with low capacitance. Devices with bare GaAs and passivated AlGaAs/GaAs nanowires are also fabricated to compare the responsivity with and without surface passivation. We are able to achieve responsivity of >0.5 A/W and Signal-Noise-Ratio in excess of 7 dB for 2 V applied reverse bias with passivated nanowire devices. Capacitance-voltage measurement yields an overall capacitance of