Optical conductivity data of the intermetallic compounds (Fe1 - xVx)3Al (0 ? x ? 0.33) reveal that their density of states around the Fermi energy (EF) is strongly reduced as x is increased. In particular, Fe2VAl (x = 0.33) has a deep, well-developed pseudogap of 0.1-0.2 eV at EF and a small density (?5 × 1020 cm-3) of carriers, which is highly unusual for intermetallic compounds. It is shown that the pseudogap results from the band structure of Fe2VAl, rather than from temperature-dependent correlation effects. Based on the present results, we propose a simple model that consistently explains both the semiconductorlike transport and the metallic photoemission results previously observed for Fe2VAl
We report the results of a 51V and 69Ga nuclear magnetic resonance (NMR) study of Fe2VGa at temperat...
We report the results of a 27Al and 51V nuclear magnetic resonance study of Fe2VAl at temperatures b...
Many material properties such as the electronic transport characteristics depend on the details of t...
Fe{sub 2}VAl has recently been discovered to have a negative temperature coefficient of resistivity,...
We use hard x-ray photoemission to resolve a controversial issue regarding the mechanism for the for...
The high-resolution soft x-ray photoelectron study of Heusler(L21)-type (Fe2 3V1 3)100-yAly (y=23.8-...
The room temperature "metallic" properties of the quasi-one-dimensional material (TaSe4)(2)I differ ...
International audienceA very large thermoelectric figure of merit ZT = 6 at 380 K has recently been ...
Using first-principles calculations, we show that Fe2VAl is an indirect band-gap semiconductor. Our ...
The results of an investigation of the electronic structure of the valence band of various Al-based ...
This study reports the valence band photoelectron spectroscopic studies of FeTe and FeSe. A doping i...
Fe2VAl has recently been discovered to have a negative temperature coefficient of resistivity, moder...
An anomalous negative temperature dependence of electrical resistivity has been observed in (Fe1-xVx...
NaAlSi and NaAlGe are isostructural and isoelectronic semimetals with topological nodal lines close ...
We use hard x-ray photoemission to resolve a controversial issue regarding the mechanism for the for...
We report the results of a 51V and 69Ga nuclear magnetic resonance (NMR) study of Fe2VGa at temperat...
We report the results of a 27Al and 51V nuclear magnetic resonance study of Fe2VAl at temperatures b...
Many material properties such as the electronic transport characteristics depend on the details of t...
Fe{sub 2}VAl has recently been discovered to have a negative temperature coefficient of resistivity,...
We use hard x-ray photoemission to resolve a controversial issue regarding the mechanism for the for...
The high-resolution soft x-ray photoelectron study of Heusler(L21)-type (Fe2 3V1 3)100-yAly (y=23.8-...
The room temperature "metallic" properties of the quasi-one-dimensional material (TaSe4)(2)I differ ...
International audienceA very large thermoelectric figure of merit ZT = 6 at 380 K has recently been ...
Using first-principles calculations, we show that Fe2VAl is an indirect band-gap semiconductor. Our ...
The results of an investigation of the electronic structure of the valence band of various Al-based ...
This study reports the valence band photoelectron spectroscopic studies of FeTe and FeSe. A doping i...
Fe2VAl has recently been discovered to have a negative temperature coefficient of resistivity, moder...
An anomalous negative temperature dependence of electrical resistivity has been observed in (Fe1-xVx...
NaAlSi and NaAlGe are isostructural and isoelectronic semimetals with topological nodal lines close ...
We use hard x-ray photoemission to resolve a controversial issue regarding the mechanism for the for...
We report the results of a 51V and 69Ga nuclear magnetic resonance (NMR) study of Fe2VGa at temperat...
We report the results of a 27Al and 51V nuclear magnetic resonance study of Fe2VAl at temperatures b...
Many material properties such as the electronic transport characteristics depend on the details of t...