Novel Silicon-on-Insulator Lateral Power Device with Partial Oxide Pillars in the Drift Region

[[abstract]]In this paper, a novel silicon-on-insulator (SOI) lateral power device with partial oxide pillars in the drift region is proposed and investigated using a three dimensional device simulator. The structure is characterized by the alternate doped silicon pillars and oxide pillars in the drift region, which can be fabricated by the dielectric isolation process without any additional mask. Owing to the modulation of the oxide pillars, a new additional electric field peak is introduced in the middle of the drift region, thus reducing the surface electric field peaks and transferring the breakdown location. Compared with the conventional reduced surface field (RESURF) device, a 21.5% increase in the breakdown voltage and a 50% increase in the figure of merit (FOM) are obtained in the novel device