Reliability test of high voltage SOI device under Hot carrier injection stress

[[abstract]]The Hot-carrier-induced on-resistance degradations of Locos PLDMOS and Tapered PLDMOS transistors are investigated in detail by MEDICI, a TCAD simulation and charge pumping test. For different stress conditions, degradation behaviors of PLDMOS transistors are analyzed and degradation mechanisms are presented. Then the effect of On and Off-state Breakdown voltage, IdVg and Ron degradations are investigated. Also HCI degradation result of PLDMOS transistors are compared with NLDMOS transistors results