Structure and optoelectronic properties of p-type CuCrO2 thin films prepared by magnetron cosputtering deposition

[[abstract]]The copper chromium oxide films were prepared by dc reactive magnetron co-sputtering technique. After deposition, the films were annealed under Ar atmosphere in a tube furnace. The structure and optoelectronic properties of the Cu-Cr-O films were characterized by means of X-ray diffraction (XRD), field-emission transmission electron microscopy (FETEM), UV-VIS spectroscopy and Hall effect measurement. The copper chromium oxide films were investigated as a function of chromium target working power. As the chromium content increasing, CuO phases are reduced to nonexistence in the CuCrO2 films. The transmission of the single-phase CuCrO2 film to the 600 nm visible light was 60 %. The direct band gap of the film was 3.05 eV. Hall effect measurement revealed that the CuCrO2 film belonged to the p-type conduction category, with a carrier concentration of 7.49x1016 cm-3, the mobility of 0.279 cm2 /V-s and the resistance value was 298.3 Ω-cm