A Study on the Hot-Carrier Reliability of 200V SOI PLDMOS

[[abstract]]The reliability of the high voltage P-LDMOS is examined extensively by moving the impact ionization area and varying the surface electric field in the drift region. Breakdown walkout in high-voltage P-LDMOS devices on a thin SOI layer is demonstrated closely related to gate-metal field plate extension and gate channel length. The two field peaks along the channel can be reduced by varying the impact ionization area properly. N-well ion implantation dose monitoring and gate-metal field plate extensions are also studied to effectively improve the breakdown voltage and the reliability of the device with 12 micron P-drift length on SOI for 200V applications