A Novel Device for 800V Ultra-High Voltage LDMOS

[[abstract]]In recent years, because of flat-panel displays and communications products replacing old ones, making the demand for power components increased significantly. Circuit in order to conform to the trend of integrated, power components must be responsible for two major duties, one to carry the high operating voltage, and the other with a smaller on-resistance. The paper first proposed a use of 2-D (Poisson's) equation analytical method to predict the voltage and electric field distribution of trends and for JI (Junction Isolation) Thick SOI with different structures, the use of 2-D semiconductor device simulation tool MEDICI validation of analytical methods. Another matter raised by Buried P-ring LDMOSFET for RESURF LDMOSFET an adverse change version, increase the RESURF effect by enhancing the concentration, you can make the performance of its component is higher than the traditional RESURF LDMOSFET