Fabrication and characteristics of microwave backward diodes in indium arsenide /

Hopkins, John B.
Electronics Research Center (U.S.)

Publisher

Washington, D.C. : National Aeronautics and Space Administration ; [Springfield, Va. : For sale by the Clearinghouse for Federal Scientific and Technical Information,

Abstract

Prepared at Electronics Research Center."September 1969."Cover title.Includes bibliographical references (p. 22-23).Mode of access: Internet

Extracted data

We use cookies to provide a better user experience.

Data Protection

Fabrication and characteristics of microwave backward diodes in indium arsenide /

Abstract

Extracted data

Fabrication and characteristics of microwave backward diodes in indium arsenide /

Abstract

Extracted data

Related items

Related items