Add to ORKGElectron and hole drift mobilities in photoconducting amorphous selenium.Includes bibliographical references (p. 25-26).Electron and hole drift mobilities in photoconducting amorphous selenium.Mode of access: Internet
The "n-like layer" is important in multilayer layer amorphous selenium (a-Se) based Xray detector s...
A new x-ray image tube that has two major advantages over existing devices, namely the reduction of ...
The electronic properties of amorphous materials are greatly affected by the density of localized st...
119 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1961.U of I OnlyRestricted to the ...
The photoconductivity of amorphous selenium varies linearly with light intensity. This result cannot...
The variation of photoconductivity with various parameters (wavelength, light intensity, electric fi...
Amorphous selenium (a-Se) and its alloys are important photoconductor materials used in direct conve...
grantor: University of TorontoA theoretical model is presented of a method to acquire digi...
The charge transport characteristics of amorphous semiconductors determine how well they will perfor...
We have modeled the photoinduced volume change in amorphous selenium. After photon absorption, we tr...
La photoconduction du sélénium amorphe est mesurée sur des couches minces préparées en ultra-vide. L...
Thesis (M.S.)--University of Rochester. College of Engineering and Applied Science. Institute of Opt...
The steady state photoconductivity is studied between 230°C and 350°C. The electrical field dependen...
In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due ...
In disordered semiconductors, electronic transport - and with it the practical use of the material -...
The "n-like layer" is important in multilayer layer amorphous selenium (a-Se) based Xray detector s...
A new x-ray image tube that has two major advantages over existing devices, namely the reduction of ...
The electronic properties of amorphous materials are greatly affected by the density of localized st...
119 p.Thesis (Ph.D.)--University of Illinois at Urbana-Champaign, 1961.U of I OnlyRestricted to the ...
The photoconductivity of amorphous selenium varies linearly with light intensity. This result cannot...
The variation of photoconductivity with various parameters (wavelength, light intensity, electric fi...
Amorphous selenium (a-Se) and its alloys are important photoconductor materials used in direct conve...
grantor: University of TorontoA theoretical model is presented of a method to acquire digi...
The charge transport characteristics of amorphous semiconductors determine how well they will perfor...
We have modeled the photoinduced volume change in amorphous selenium. After photon absorption, we tr...
La photoconduction du sélénium amorphe est mesurée sur des couches minces préparées en ultra-vide. L...
Thesis (M.S.)--University of Rochester. College of Engineering and Applied Science. Institute of Opt...
The steady state photoconductivity is studied between 230°C and 350°C. The electrical field dependen...
In the last 10-15 years there has been a renewed interest in amorphous Se (a-Se) and its alloys due ...
In disordered semiconductors, electronic transport - and with it the practical use of the material -...
The "n-like layer" is important in multilayer layer amorphous selenium (a-Se) based Xray detector s...
A new x-ray image tube that has two major advantages over existing devices, namely the reduction of ...
The electronic properties of amorphous materials are greatly affected by the density of localized st...