Radiation tolerance of a select group of semiconductor diodes /

A select group of reference-type silicon diodes were irradiated through an integrated flux range from 10p13s nvt to 7 x 10p16s nvt (E>kev). Parameters that would indicate displacement damage were monitored during the irradiation. This report gives a brief presentation which shows the qualitative nature of findings, and recommendations are made on how quantitative results could be obtained in the future.\"TID-4500 (15th Ed.) ; Radiation Effects.""Case No. 13.778.11.""November 23, 1960."A select group of reference-type silicon diodes were irradiated through an integrated flux range from 10p13s nvt to 7 x 10p16s nvt (E>kev). Parameters that would indicate displacement damage were monitored during the irradiation. This report gives a brief presentation which shows the qualitative nature of findings, and recommendations are made on how quantitative results could be obtained in the future.\Mode of access: Internet.This bibliographic record is available under the Creative Commons CC0 public domain dedication. The University of Florida Libraries, as creator of this bibliographic record, has waived all rights to it worldwide under copyright law, including all related and neighboring rights, to the extent allowed by law