Antimony - Selenium (SS) binary alloys have recently gained much attention due to their application in developing phase change random memory (PRAM) devices. In order to understand the electronic and structural properties of this system in detail, we have synthesized bulk Sb55Se45. Energy dispersive x-ray analysis (EDX), ellipsometry and high temperature x-ray diffraction experiments were performed to characterize the samples. The electronic and structural properties are compared with the thinfilm Sb 65Se35 reported earlier. The results of our experiments show that the crystal structure is influenced mainly by the composition and crystallite size. We have observed the bulk Sb55Se45 crystallize in the Sb2Se3 type orthorhombic structure which ...
A combinatorial synthetic methodology based on evaporation sources in ultra-high vacuum has been use...
We observed the atomic structures for each reset and set state in a phase-change random access memor...
Chalcogenide alloys in the Ge-Sb-Te system exhibit a large contrast in their optical and electrical ...
Antimony - Selenium (SS) binary alloys have recently gained much attention due to their application ...
Phase change alloys have recently gained increasing attention due to their application in developing...
Recently, with the rapidly growing demand for mobile electronic products, much effort has been put i...
The thermal properties and electrical-switching behavior of semiconducting chalcogenide SbxSe55-xTe4...
The thermal properties and electrical-switching behavior of semiconducting chalcogenide SbxSe55-xTe4...
Phase change materials have been extensively studied due to their promising applications in phase ch...
The limitations of Flash memory as an electronic storage medium have driven the development of newte...
Phase change materials have been extensively studied due to their promising applications in phase ch...
GeTe and Ge2Sb2Te5 alloys are potential candidates for non-volatile phase change random access memor...
Both Ag- and In-doped Sb2Te (AIST) and phase change materials located along the GeTe-Sb2Te3 pseudo-b...
Ge2Sb2Te5 (GST) films, one of the most suitable Chalcogenide alloys for Phase change Random Access M...
Phase change materials are highly important for technological applications in data storage. This wor...
A combinatorial synthetic methodology based on evaporation sources in ultra-high vacuum has been use...
We observed the atomic structures for each reset and set state in a phase-change random access memor...
Chalcogenide alloys in the Ge-Sb-Te system exhibit a large contrast in their optical and electrical ...
Antimony - Selenium (SS) binary alloys have recently gained much attention due to their application ...
Phase change alloys have recently gained increasing attention due to their application in developing...
Recently, with the rapidly growing demand for mobile electronic products, much effort has been put i...
The thermal properties and electrical-switching behavior of semiconducting chalcogenide SbxSe55-xTe4...
The thermal properties and electrical-switching behavior of semiconducting chalcogenide SbxSe55-xTe4...
Phase change materials have been extensively studied due to their promising applications in phase ch...
The limitations of Flash memory as an electronic storage medium have driven the development of newte...
Phase change materials have been extensively studied due to their promising applications in phase ch...
GeTe and Ge2Sb2Te5 alloys are potential candidates for non-volatile phase change random access memor...
Both Ag- and In-doped Sb2Te (AIST) and phase change materials located along the GeTe-Sb2Te3 pseudo-b...
Ge2Sb2Te5 (GST) films, one of the most suitable Chalcogenide alloys for Phase change Random Access M...
Phase change materials are highly important for technological applications in data storage. This wor...
A combinatorial synthetic methodology based on evaporation sources in ultra-high vacuum has been use...
We observed the atomic structures for each reset and set state in a phase-change random access memor...
Chalcogenide alloys in the Ge-Sb-Te system exhibit a large contrast in their optical and electrical ...