Add to ORKGA new thermal oxidation model based on a rate equation approach with concentration dependent diffusion coefficient is proposed for ultrathin SiO2 for thicknesses of the order of 100 Å. The oxidation reaction of silicon is assumed to be dependent on the concentrations of unreacted silicon and oxygen. The results of oxide thickness versus oxidation time for various growth conditions and activation energies for diffusion coefficients are in agreement with various experimental data for O2 ambient
This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ult...
This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ult...
AbstractPrevious studies of thermal oxidation on a doped structure showed that growth of thermal SiO...
A new thermal oxidation model based on a rate equation approach with concentration dependent diffusi...
Silicon together with its native oxide SiO$_2$ was recognized as an outstanding material system for ...
Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication becau...
Thermal oxidation of Silicon in dry O2, in the thin regime(\u3c 500A) is of vital importance to VLSI...
Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication becau...
Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication becau...
Since the 1960's many adaptations to the linear parabolic model for silicon oxidation have been prop...
This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ult...
Since the 1960's many adaptations to the linear parabolic model for silicon oxidation have been prop...
To gain a better understanding of the silicon oxidation process, we perform numerical simulation of ...
To gain a better understanding of the silicon oxidation process, we perform numerical simulation of ...
Downltion of silicon by oxygen (dry or in a water ambient), is based on an oxidation mechanism consi...
This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ult...
This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ult...
AbstractPrevious studies of thermal oxidation on a doped structure showed that growth of thermal SiO...
A new thermal oxidation model based on a rate equation approach with concentration dependent diffusi...
Silicon together with its native oxide SiO$_2$ was recognized as an outstanding material system for ...
Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication becau...
Thermal oxidation of Silicon in dry O2, in the thin regime(\u3c 500A) is of vital importance to VLSI...
Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication becau...
Thermal oxidation of silicon belongs to the most decisive steps in microelectronic fabrication becau...
Since the 1960's many adaptations to the linear parabolic model for silicon oxidation have been prop...
This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ult...
Since the 1960's many adaptations to the linear parabolic model for silicon oxidation have been prop...
To gain a better understanding of the silicon oxidation process, we perform numerical simulation of ...
To gain a better understanding of the silicon oxidation process, we perform numerical simulation of ...
Downltion of silicon by oxygen (dry or in a water ambient), is based on an oxidation mechanism consi...
This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ult...
This work presents a wide range of growth rate data of thin (1-60 nm) silicon oxides grown in an ult...
AbstractPrevious studies of thermal oxidation on a doped structure showed that growth of thermal SiO...