Development of Ion Beam Nuclear Transmutation Doping (IBNTD) for Novel Electronics in Extreme Conditions

Development of IBNTD for electronics under extreme conditions. •We hope to create novel wide bandgap devices using Ion Beam Nuclear Transmutation Doping (IBNTD). These devices may be used as rugged high power switches, and high current/low noise amplifiers. Diamond in itself represents a “Holy Grail” for electrical applications due to its very high thermal conductivity and excellent electrical characteristics. •We also hope to develop devices that can convert the enormous energy from high-energy nuclear particles (α2+,β-,β+, γparticles) into useful electricity and thus harness the enormous energy still contained in “spent” nuclear fuel. Developing these direct energy conversion (DEC) devices would significantly reduce conversion inefficiencies. •To create a radiation-rugged devices that can withstand high particle beam fluxes (e.g. outer space, and nuclear engineering sensors). •Reference:“A novel method to dope diamond -Ion Beam Nuclear Transmutation Doping (IBNTD),” M.G. Pravica, N.A. Guardala and J.L. Price, Diamond and Related Materials, 18, pp. 846-849(2009) •US Patent7,795,120:“Doping wide band gap semiconductors using proton induced transmutation.