Photodetectors are semiconductor devices that can convert optical signals into electrical signals. There is a wide range of photodetector applications such as fiber optics communication, infrared heat camera sensors, as well as in equipment used for medical and military purposes. Nanowires are thin needle-shaped structures made of semiconductor materials, e.g. gallium arsenide (GaAs), indium phosphide (InP) or silicon (Si). Their small size, well-controlled crystal structure and composition as well as the possibility to fabricate them monolithically on silicon make them ideally suited for sensitive photodetectors with low noise. In this project, Fourier Transform Infrared (FTIR) Spectroscopy is used to investigate the optical characteristic...
As society continues to push for devices that are faster, cheaper, and more efficient, new technolog...
Degradation of properties of semiconductor devices when layers of different materials are grown on t...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
Photodetectors are semiconductor devices capable of converting optical signals into electrical signa...
Photodetectors are a kind of semiconductor devices that convert incoming light to an electrical sign...
In this project Fourier Transform Infrared Spectroscopy is used to investigate a new kind of photodi...
We have investigated two devices for detection of radiation, typically in the infrared range, Photon...
Photodetectors are a kind of semiconductor devices that convert incoming light to an electrical sign...
We report on a comprehensive study of electrical and optical properties of efficient near-infrared p...
Semiconductors are the backbone of almost every electrical or optical component, one of them being p...
The availability of new manufacturing methodology in solid state physics makes it possible to grow n...
We report on electrical and optical properties of p(+)-i-n(+)photodetectors/solar cells based on squ...
In this project, a new type of InP solar cell was investigated. The main idea is that light is conve...
Nanoscience is an emerging field of technology where the bottom-up fabrication techniques are utiliz...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
As society continues to push for devices that are faster, cheaper, and more efficient, new technolog...
Degradation of properties of semiconductor devices when layers of different materials are grown on t...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
Photodetectors are semiconductor devices capable of converting optical signals into electrical signa...
Photodetectors are a kind of semiconductor devices that convert incoming light to an electrical sign...
In this project Fourier Transform Infrared Spectroscopy is used to investigate a new kind of photodi...
We have investigated two devices for detection of radiation, typically in the infrared range, Photon...
Photodetectors are a kind of semiconductor devices that convert incoming light to an electrical sign...
We report on a comprehensive study of electrical and optical properties of efficient near-infrared p...
Semiconductors are the backbone of almost every electrical or optical component, one of them being p...
The availability of new manufacturing methodology in solid state physics makes it possible to grow n...
We report on electrical and optical properties of p(+)-i-n(+)photodetectors/solar cells based on squ...
In this project, a new type of InP solar cell was investigated. The main idea is that light is conve...
Nanoscience is an emerging field of technology where the bottom-up fabrication techniques are utiliz...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...
As society continues to push for devices that are faster, cheaper, and more efficient, new technolog...
Degradation of properties of semiconductor devices when layers of different materials are grown on t...
The possibility to engineer nanowire heterostructures with large bandgap variations is particularly ...