11-amino-1 undecene-covered SI (100) and GE (100) surfaces

Title from PDF of title page (University of Missouri--Columbia, viewed on September 13, 2012).The entire thesis text is included in the research.pdf file; the official abstract appears in the short.pdf file; a non-technical public abstract appears in the public.pdf file.Thesis advisor: Dr. C. Michael GreenliefIncludes bibliographical references.Vita.M.S. University of Missouri--Columbia 2012."May 2012"Due to the similar properties and structures of silicon and germanium surfaces, they have similar methods of passivation and organic functionalizaiton reactions. The formation of organic monolayers on semiconductor surfaces has recently become an area of intense investigation. One important motivation is the need to control electronic properties by covalently attaching molecules to the semiconductor surface. Another driving motivation is to incorporate organic molecular properties, such as chemical affinity, flexibility, conductivity, and chirality for developing biomedical sensors. The research described herein investigates the hydrogen, t-BoC, and amine terminated Si(100) or Ge(100) surfaces, and to determine the elemental percentages of carbon, nitrogen, oxygen and silicon/ germanium present at the semiconductor surface using Xray photoelectron spectroscopy (XPS)