URL:http://link.aps.org/doi/10.1103/PhysRevB.44.8880 DOI:10.1103/PhysRevB.44.8880The electronic structure of the CaF2/Si(111) interface calculated within the local-density-functional theory with the linear muffin-tin orbitals method is presented. We examine the interface states for three different structural models of the Ca-terminated interface. For each model a pair of two-dimensional interface bands is found. The unoccupied interface band around the zone center is a truly localized band while the occupied interface band is buried below the valence-band maximum in agreement with recent experimental results. The nature of the two-dimensional interface states and the extent of localization of the wave functions at the interface are also di...
We present first principle calculations of ultrathin silicon (111) layers embedded in CaF2, a lattic...
The self-consistent electronic properties of the epitaxial Si(111)-NiSi2(111) interfaces are compute...
The joint use of metastable deexcitation spectroscopy and angle resolved ultraviolet photoemission g...
The insulator-semiconductor CaF2-Si(111) interface is studied in the first stages of formation. The...
The surface linear muffin-tin method in the atomic-sphere approximation (SLMTO-ASA) is applied to st...
The first stage of formation of the CaF2-Si(111) and Ca-Si(111) interfaces is studied through the em...
The electronic properties of ultra-thin Si layers have been investigated. Using the linear muffin ti...
The electronic properties of ultra-thin Si layers have been investigated. Using the linear muffin ti...
We present first principle calculations of thin (1-7 double layers) silicon (111) layers in CaF2, a ...
The electronic band structures of ultra-wide gap CaF2 are investigated with both the hybrid function...
Ab initio calculations, based on pseudopotentials and density functional theory, have been performed...
We present first principle calculations of ultrathin silicon (111) layers embedded in CaF2, a lattic...
One promising approach for the development of silicon-based light-emitting devices is the epitaxial ...
We review the theoretical studies on the reactive interfaces between silicon and transition metals. ...
We have investigated the electronic structure of the Ca/Si(111)-(2×1) surface using angle-resolved p...
We present first principle calculations of ultrathin silicon (111) layers embedded in CaF2, a lattic...
The self-consistent electronic properties of the epitaxial Si(111)-NiSi2(111) interfaces are compute...
The joint use of metastable deexcitation spectroscopy and angle resolved ultraviolet photoemission g...
The insulator-semiconductor CaF2-Si(111) interface is studied in the first stages of formation. The...
The surface linear muffin-tin method in the atomic-sphere approximation (SLMTO-ASA) is applied to st...
The first stage of formation of the CaF2-Si(111) and Ca-Si(111) interfaces is studied through the em...
The electronic properties of ultra-thin Si layers have been investigated. Using the linear muffin ti...
The electronic properties of ultra-thin Si layers have been investigated. Using the linear muffin ti...
We present first principle calculations of thin (1-7 double layers) silicon (111) layers in CaF2, a ...
The electronic band structures of ultra-wide gap CaF2 are investigated with both the hybrid function...
Ab initio calculations, based on pseudopotentials and density functional theory, have been performed...
We present first principle calculations of ultrathin silicon (111) layers embedded in CaF2, a lattic...
One promising approach for the development of silicon-based light-emitting devices is the epitaxial ...
We review the theoretical studies on the reactive interfaces between silicon and transition metals. ...
We have investigated the electronic structure of the Ca/Si(111)-(2×1) surface using angle-resolved p...
We present first principle calculations of ultrathin silicon (111) layers embedded in CaF2, a lattic...
The self-consistent electronic properties of the epitaxial Si(111)-NiSi2(111) interfaces are compute...
The joint use of metastable deexcitation spectroscopy and angle resolved ultraviolet photoemission g...