Unipolar spin diodes and transistors

doi:10.1063/1.1348317 http://scitation.aip.org/getpdf/servlet/GetPDFServlet?filetype=pdf&id=APPLAB000078000009001273000001&idtype=cvips&prog=normal&doi=10.1063/1.1348317Unipolar devices constructed from ferromagnetic semiconducting materials with variable magnetization direction are shown theoretically to behave very similarly to nonmagnetic bipolar devices such as the p-n diode and the bipolar (junction) transistor. Such devices may be applicable for magnetic sensing, nonvolatile memory, and reprogrammable logic.G.V. acknowledges support from NSF Grant Nos. DMR-9706788 and DMR-0074959. M.E.F. acknowledges support from NSF Grant No. ECS-0000556