Electron Trapping in a One-Dimensional Semiconductor Quantum Wire with Multiple Impurities

We demonstrate the trapping of a conduction electron between two identical adatom impurities in a one-dimensional semiconductor quantum-dot array system (quantum wire). Bound steady states arise even when the energy of the adatom impurity is located in the continuous one-dimensional energy miniband. The steady state is a realization of the bound state in continuum (BIC) phenomenon first proposed by von Neuman and Wigner [Phys. Z. 30, 465 (1929)]. We analytically solve the dispersion equation for this localized state, which enables us to reveal the mechanism of the BIC. The appearance of the BIC state is attributed to the quantum interference between the impurities. The Van Hove singularity causes another type of bound state to form above and below the band edges, which may coexist with the BIC