High-frequency microwave signal generation in a semiconductor laser based on double injection locking

Y. S. Juan

DOI

10.1109/PHOTONICS.2010.5698919

Publisher

Institute of Electrical and Electronics Engineers

Abstract

[[abstract]]We numerically investigate the characteristics of high-frequency microwave signal generation by double injection-locking in a semiconductor laser. Performances of 60 GHz continuous tuning range, less than 5 dB power fluctuation, and narrow linewidth are achieved.[[fileno]]2030181030038[[department]]電機工程學

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High-frequency microwave signal generation in a semiconductor laser based on double injection locking

Abstract

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High-frequency microwave signal generation in a semiconductor laser based on double injection locking

Abstract

Extracted data

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