Rapid Oxidation via Adsorption of Oxygen in Laser-induced Amorphous Silicon

[[abstract]]Amorphous silicon has been produced on a single‐crystal silicon surface that was exposed to intense pulsed UV‐laser radiation at 266 nm. In addition, the formation of an oxide several tens of nanometers in thickness is observed when the irradiation takes place in an O2 or in an air ambient. Various experimental techniques including transmission electron microscopy, sputtered Auger electron spectroscopy, and differential Fourier‐transform IR spectroscopy have been employed to characterize the laser‐induced amorphous silicon and the oxide layer formed by this rapid melting and resolidification process. The present study suggests a new oxidation phenomena, namely, ’’laser‐induced oxidation.’’[[fileno]]2030182010029[[department]]電機工程學