[[abstract]]In this work, the capacitance-voltage characteristics of Au/Ta2O5/Si capacitors are studied. The Ta2O5 films are deposited by plasma-enhanced chemical vapor deposition system. Constant voltage stress is applied to the Ta2O5 capacitors. The flatband voltage VFB is measured before and after the constant voltage stress. The flatband voltage shift due to the stress is explained by the trapping of electrons and holes. An interface trapped charge density (Dit) about 2×1011 eV-1 cm-2 in the midgap of silicon is extracted by using the conductance method. The discharging transient current after a constant voltage stress is measured and correlated with the electron and hole trapping. The trapped electron and hole densities in Ta2O5 are ca...
[[abstract]]Tantalum oxide (Ta2O5) is an important material for future dynamic random access memory ...
Ta2O5 and TaOxNy thin films were deposited by atomic layer deposition (ALD) from Ta(NMe2)(5) (PDMAT)...
[[abstract]]As the gate oxide thickness decreases below 2 nm, the gate leakage current increases dra...
[[abstract]]Tantalum oxide (Ta2O5) is an important material for future dynamic random access memory ...
In this paper we present an integral physical model for describing electrical and dielectric propert...
[[abstract]]Ta2O5 is a candidate for use in metal-oxide-metal (MOM) capacitors in several areas of s...
High dielectric constant tantalum-pentoxide insulating layers were prepared on p-type (100) crystall...
The paper will present the modeling of charge transport in Ta2O5 nanolayers together with experiment...
[[abstract]]N-channel metal oxide semiconductor field effect transistors (MOSFETs) using Ta2O5, gate...
[[abstract]]A metal-high-k-high-k-oxide-silicon structure was fabricated for nonvolatile memory appl...
Tantalum Pentaoxide, an alternative to SiO2, as a high-k dielectric for DRAM and MOS applications, f...
Electrical characteristics for metal-tantalum pentoxide-silicon dioxide-silicon structures are descr...
[[abstract]]The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator...
Au-Ta2O5-SiO2-Si capacitors were studied in order to investigate their dielectric characteristics an...
[[abstract]]Titanium-modified tantalum oxide thin films with a composition of (Ta2O5)0.922–(TiO2)0.0...
[[abstract]]Tantalum oxide (Ta2O5) is an important material for future dynamic random access memory ...
Ta2O5 and TaOxNy thin films were deposited by atomic layer deposition (ALD) from Ta(NMe2)(5) (PDMAT)...
[[abstract]]As the gate oxide thickness decreases below 2 nm, the gate leakage current increases dra...
[[abstract]]Tantalum oxide (Ta2O5) is an important material for future dynamic random access memory ...
In this paper we present an integral physical model for describing electrical and dielectric propert...
[[abstract]]Ta2O5 is a candidate for use in metal-oxide-metal (MOM) capacitors in several areas of s...
High dielectric constant tantalum-pentoxide insulating layers were prepared on p-type (100) crystall...
The paper will present the modeling of charge transport in Ta2O5 nanolayers together with experiment...
[[abstract]]N-channel metal oxide semiconductor field effect transistors (MOSFETs) using Ta2O5, gate...
[[abstract]]A metal-high-k-high-k-oxide-silicon structure was fabricated for nonvolatile memory appl...
Tantalum Pentaoxide, an alternative to SiO2, as a high-k dielectric for DRAM and MOS applications, f...
Electrical characteristics for metal-tantalum pentoxide-silicon dioxide-silicon structures are descr...
[[abstract]]The effect of Ta2O5 doping on electrical characteristics of SrTiO3 (STO) metal-insulator...
Au-Ta2O5-SiO2-Si capacitors were studied in order to investigate their dielectric characteristics an...
[[abstract]]Titanium-modified tantalum oxide thin films with a composition of (Ta2O5)0.922–(TiO2)0.0...
[[abstract]]Tantalum oxide (Ta2O5) is an important material for future dynamic random access memory ...
Ta2O5 and TaOxNy thin films were deposited by atomic layer deposition (ALD) from Ta(NMe2)(5) (PDMAT)...
[[abstract]]As the gate oxide thickness decreases below 2 nm, the gate leakage current increases dra...