The effect of bandgap narrowing and two dimensional grain on high-temperature properties of polysilicon-emitter bipolar junction transistors

[[abstract]]A two-dimensional model with grain boundary traps for polycrystalline silicon is used in this study to analyze the temperature effects of polysilicon emitter bipolar junction transistors (PEBJTs). The base current, the collector current, and the band gap narrowing of the transistor have been examined in the temperature range of 25°C to 150°C. The experimental results agreed well with the theoretical simulations.[[fileno]]2030177010032[[department]]電機工程學