Experimental results of On-state Resistance Reduction by STI Fingers in LDMOSFET

[[abstract]]This letter demonstrates a successful method for on-state resistance reduction up to 20% by shallow trench isolation (STI) fingers and with extra NLDD implant in the fingered region simultaneously for medium power devices. This fingered region provides a multidimensional electric field that avoids MOSFET breakdown voltage decrease, and it also shortens the drain-current conduction path. Therefore, low on-state resistance and high drain driving current is obtained in our proposed device. Careful design for structural parameters of this STI finger is needed to achieve the optimum R ON performance without hurting breakdown voltage.[[fileno]]2030177010017[[department]]電機工程學