The Substrate Heating Effects on Ion-Beam Sputter-Deposited CuInS2 and GaP Thin Films

[[abstract]]GaP and CuInS2 thin films were deposited by ion-beam sputtering. Transmission electron microscopy and Rutherford backscattering spectrometry were mainly used as the diagnostic tools to analyze the deposited film structures, compositions and impurity contents. Substrate heating were done and phase transformations at these temperatures were observed.[[fileno]]2030170010105[[department]]電機工程學