[[abstract]]Single crystals of CuInS2 were grown by the closed tube chemical vapor transport method, using iodine as the transport agent. The charge zone was held at 800°C, while the optimal growth zone temperature was found to be in the range of 740–750°C. The shape and the size of the as-grown crystals were affected by the impurity adding and by the temperature difference between the two zones. The transport rate of the growth process has been examined on the basis of thermodynamics. The theoretical values are verified by the experimental results, except for some explicable deviations. The transport rate shows a maximum as a function of iodine concentration.[[fileno]]2030170010095[[department]]電機工程學
[[abstract]]Experimental techniques for growing CuInS2 layers on GaP substrates by the metalorganic ...
Copper–indium–gallium–sulfide–selenide (CIGSSe) is used in photovoltaic cells and photocathodes, bec...
[[abstract]]Experimental techniques for growing CuInS2 layers on GaP substrates by the metalorganic ...
Novel methods for the material synthesis, crystal growth and film preparation of CuInS2 were develop...
Novel methods for the material synthesis, crystal growth and film preparation of CuInS2 were develop...
Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chem...
Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chem...
Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chem...
Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chem...
Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chem...
A large single crystal of CuI was fabricated by the temperature difference method using NH4I aqueous...
Single crystals of CuInS2 have been grown by the chemical vapour transport technique and annealed in...
International audienceThis paper reports the prediction of optimal conditions to grow good quality c...
[[abstract]]The letter describes the use of THM in the growth of CuInS2 single crystals. This work d...
The phase relations in the metal portion of the Cu In S system have been investigated by differentia...
[[abstract]]Experimental techniques for growing CuInS2 layers on GaP substrates by the metalorganic ...
Copper–indium–gallium–sulfide–selenide (CIGSSe) is used in photovoltaic cells and photocathodes, bec...
[[abstract]]Experimental techniques for growing CuInS2 layers on GaP substrates by the metalorganic ...
Novel methods for the material synthesis, crystal growth and film preparation of CuInS2 were develop...
Novel methods for the material synthesis, crystal growth and film preparation of CuInS2 were develop...
Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chem...
Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chem...
Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chem...
Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chem...
Photoluminescence of CuInS2 single crystals grown by both the traveling heater method (THM) and chem...
A large single crystal of CuI was fabricated by the temperature difference method using NH4I aqueous...
Single crystals of CuInS2 have been grown by the chemical vapour transport technique and annealed in...
International audienceThis paper reports the prediction of optimal conditions to grow good quality c...
[[abstract]]The letter describes the use of THM in the growth of CuInS2 single crystals. This work d...
The phase relations in the metal portion of the Cu In S system have been investigated by differentia...
[[abstract]]Experimental techniques for growing CuInS2 layers on GaP substrates by the metalorganic ...
Copper–indium–gallium–sulfide–selenide (CIGSSe) is used in photovoltaic cells and photocathodes, bec...
[[abstract]]Experimental techniques for growing CuInS2 layers on GaP substrates by the metalorganic ...