The doping concentration dependence of the zinc acceptor ionization energy in In0.5Ga0.5P

[[abstract]]The doping concentration dependence of the zinc acceptor energy level in In0.49Ga0.51P has been studied and can be expressed as EA=45.75−8.20×10−6 P1/3 meV, where P is the zinc acceptor concentration in cm−3. The zinc‐doped In0.49Ga0.51P epitaxial layers were grown on 〈100〉 oriented semi‐insulating GaAs substrates which are in very good crystallinity with a lattice mismatch of only 0.26%.[[fileno]]2030161010170[[department]]電機工程學