Long-wavelength (1.3 μm) luminescence in InGaAs strained quantum-well structures grown on GaAs

[[abstract]]Room temperature photoluminescence at wavelengths between 1.2 and 1.5 μm has been observed in samples consisting of InGaAs/GaPAsSb quantum well structures grown on GaAs. The emission wavelength is varied primarily by changing the composition within the GaPAsSb layer. It is proposed that such long wavelength emission results from a spatially indirect interband transition in the type-II quantum wells where the electron and hole wave functions have large spatial overlap.[[fileno]]2030161010137[[department]]電機工程學