Carbon redistribution during metalorganic molecular beam epitaxy growth of GaAs n-i-p+-i-n structures using trimethylgallium as the p-type dopant

[[abstract]]The redistribution of carbon during molecular beam epitaxy (MBE) growth of GaAs n‐i‐p+‐i‐n structures using silicon and carbon as n‐type and p‐type dopants, respectively, is shown by secondary ion mass spectrometry (SIMS) analysis and electrochemical capacitance‐voltage measurements. Diffusion of carbon into the surface layer is clearly observed when the carbon concentration in the p+ region exceeds ∼6×1019 cm−3. The data also shows that a significant fraction of the diffused carbon is electrically active.[[fileno]]2030161010126[[department]]電機工程學