Comparison between different structures of amorphous silicon image sensors

[[abstract]]This paper discusses contact linear image sensors used as compact scanners for office automation and facsimile transmission. Comparisons are made between several thin film structures, including a Schottky barrier, a p-i junction, a p-i-n junction and a metal/insulator/semiconductor junction. Ratios of photocurrent to dark current as high as 105, and photoresponses of 4-5 ms are reported.[[fileno]]2030170010024[[department]]電機工程學